Enhancing polarization by electrode-controlled strain relaxation in PbTiO3 heterostructures
نویسندگان
چکیده
منابع مشابه
Strain relaxation in InAs/GaSb heterostructures
Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including s...
متن کاملRelaxation of Misfit-Induced Strain in Semiconductor Heterostructures
Using examples from SiGe solid solutions grown onto (001)Si substrates from metallic solutions (liquid phase epitaxy) we discuss the different mechanisms by which misfitting systems can relax the strain caused by pseudomorphic growth. We treat elastic, plastic and diffusive relaxation and their interdependence. As an extension we discuss additional relaxation mechanisms, though possibly not ver...
متن کاملStrain-Controlled Valley Splitting in Si-SiGe Heterostructures
A splitting between equivalent valleys larger than the spin splitting was recently reported in a gate confined electron system in thin Si films grown on SiGe substrate [1]. This degeneracy lifting reduces scattering and improves the coherence time. The valley splitting larger than the spin splitting opens a way to build spin qubits, which makes silicon-based quantum devices promising for future...
متن کاملMisfit Strain Relaxation of Ferroelectric PbTiO3/LaAlO3 (111) Thin Film System
Ferroelectric thin films grown on high index substrates show unusual structural and switching dynamics due to their special strain states. Understanding the misfit relaxation behavior is crucial to facilitate the high index thin film growth with improved quality. In this paper, ferroelectric PbTiO3 thin films were grown on LaAlO3 (111) substrates by pulsed laser deposition technique. The micros...
متن کاملModulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures
The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatur...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: APL Materials
سال: 2016
ISSN: 2166-532X
DOI: 10.1063/1.4939790